RF CMOS Device Modeling : BSIM-Based Physical Model with Root-Like Construction Approach - Small Signal Modeling -
نویسندگان
چکیده
A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction.
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